| PART |
Description |
Maker |
| HM-6551/883 |
RAM, 256x4, CMOS, Access Time 220ns Max
|
Intersil
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns
5V 512K x 8 CMOS flash EEPROM, access time 55ns
5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
| UPB100474ABH-6 UPB100474AD-5 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 5 ns.
|
NEC
|
| UT62256CLS-35LE UT62256CLS-70LE UT62256CLS-70LLE U |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM
Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| UT62L5128BS-55L UT62L5128BS-55LE UT62L5128BS-55LL |
Access time: 55 ns, 512 K x 8 Bit low power CMOS SRAM
Access time: 70 ns, 512 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| UT61L256JC-10 UT61L256JC-12 UT61L256JC-15 UT61L256 |
Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
|
UTRON Technology
|
| HM-6642/883 |
PROM, 512x8 CMOS, high speed, low power, Fast Access Time 120/200ns
|
Intersil Corporation
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CDP68HC68T1 CDP68HC68T1D CDP68HC68T1E CDP68HC68T1M |
From old datasheet system
CMOS Serial Real-Time Clock With RAM and Power Sense/Control
|
INTERSIL[Intersil Corporation]
|
